METHOD FOR IMPROVEMENT OF BEAM QUALITY AND WAVELENGTH STABILIZED OPERATION OF A SEMICONDUCTOR DIODE LASER WITH AN EXTENDED WAVEGUIDE

摘要

A method is disclosed for improving the functionality of a semiconductor diode laser with an extended vertical waveguide, wherein the active medium is located close to the top cladding layer of the waveguide, and the laser aims to emit light in a narrow beam with high brightness and/or to operate in the wavelength-stabilized regime. The goal is to suppress parasitic optical modes localized close to the top cladding layer of the waveguide. Unpumped sections and groves perpendicular to the stripe serve to suppress these parasitic modes. Deep (preferably a few tens of micrometers) groves parallel to the stripe suppress parasitic emission of light and the feedback in the closed lateral modes. In a tilted wave laser the longitudinal resonator can be preferably configured to have a selected length to ensure closed loops formed in the longitudinal direction by the tilted wave.