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Method for Refining Solar Grade (SoG) Silicon by Using Physical Metallurgy

机译:物理冶金法精制太阳能级硅的方法

摘要

The present invention discloses a method for physically refining solar grade silicon comprises: firstly, by using a vacuum induction furnace, selecting a high oxidizing crucible to avoid carbon pollution; secondly, conducting the vacuum-pumping during the heating process; thirdly, injecting a protective gas, after the smelting temperature reaches a predetermined temperature, the powerful oxidizing gas (chlorine) is injected into the bottom of the crucible; fourthly, producing chemical reaction with the powerful oxidizing gas and impurity such as Fe—Al—Ca—P—V, so that the reaction resultant is gasified, while the power oxidizing gas stirs with the metallic silicon liquation, and preserving the temperature; fifthly, injecting the refined metallic silicon into a pouring box to enter into a oriented crystallization procedure. The present invention has following advantages: being easy and convenient to be implemented, rapid heating, no pollution, and the purity of the silicon material refined by using the method in the present invention can be graded to 5N or more.
机译:本发明公开了一种物理上精制太阳能级硅的方法,该方法包括:首先,通过使用真空感应炉,选择高氧化坩埚以避免碳污染;第二,在加热过程中进行真空抽气。第三,注入保护气体,在熔炼温度达到预定温度后,将强氧化剂气​​体(氯)注入坩埚底部。第四,与强氧化剂气​​体和Fe-Al-Ca-PV等杂质发生化学反应,使反应产物气化,同时功率氧化剂气体与金属硅液一起搅拌,并保持温度。第五,将精炼的金属硅注入浇注箱以进入定向结晶过程。本发明具有以下优点:易于实施,加热迅速,无污染,采用本发明方法精制的硅材料的纯度可分级为5N以上。

著录项

  • 公开/公告号US2010239484A1

    专利类型

  • 公开/公告日2010-09-23

    原文格式PDF

  • 申请/专利权人 KONGQI DING;

    申请/专利号US20090407230

  • 发明设计人 KONGQI DING;

    申请日2009-03-19

  • 分类号C01B33/037;

  • 国家 US

  • 入库时间 2022-08-21 18:54:55

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