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Magnesiothermic Methods Of Producing High-Purity Silicon

机译:镁热法生产高纯硅的方法

摘要

Magnesiothermic methods of producing solid silicon are provided. In a first embodiment, solid silica and magnesium gas are reacted at a temperature from 400° C. to 1000° C. to produce solid silicon and solid magnesium oxide, the silicon having a purity from 98.0 to 99.9999%. The silicon is separated from the magnesium oxide using an electrostatic technology. In a second embodiment, the solid silicon is reacted with magnesium gas to produce solid magnesium silicide. The magnesium silicide is contacted with hydrogen chloride gas or hydrochloric acid to produce silane gas. The silane gas is thermally decomposed to produce solid silicon and hydrogen gas, the silicon having a purity of at least 99.9999%. The solid silicon and hydrogen gas are separated into two processing streams. The hydrogen gas is recycled for reaction with chlorine gas to produce hydrogen chloride gas.
机译:提供了生产固体硅的镁热法。在第一实施方案中,使固体二氧化硅和镁气在400℃至1000℃的温度下反应以产生固体硅和固体氧化镁,所述硅具有98.0至99.9999%的纯度。使用静电技术将硅与氧化镁分离。在第二实施方案中,使固体硅与镁气反应以产生固体硅化镁。使硅化镁与氯化氢气体或盐酸接触以产生硅烷气体。硅烷气体被热分解以产生固态硅和氢气,该硅具有至少99.9999%的纯度。固体硅和氢气被分成两个处理流。氢气被再循环以与氯气反应以产生氯化氢气体。

著录项

  • 公开/公告号US2010158782A1

    专利类型

  • 公开/公告日2010-06-24

    原文格式PDF

  • 申请/专利权人 JAMES G. BLENCOE;

    申请/专利号US20090547162

  • 发明设计人 JAMES G. BLENCOE;

    申请日2009-08-25

  • 分类号C01B33/023;C01B33/12;C25C1/22;

  • 国家 US

  • 入库时间 2022-08-21 18:54:48

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