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NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP III NITRIDE ELECTRONIC DEVICES
NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP III NITRIDE ELECTRONIC DEVICES
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机译:高频,高功率III族氮化物电子设备的新型制造技术
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摘要
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
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机译:通常公开了AlInGaN / InGaN / GaN MOS-DHFET的高频(亚微米栅极长度)操作的制造方法以及由该制造方法产生的HFET器件。形成HFET器件的方法通常包括新颖的双凹槽蚀刻和超薄,高质量二氧化硅层的脉冲沉积,以作为有源栅极绝缘体。本发明的方法可以用于形成任何合适的场效应晶体管(FET),并且特别适合于形成高电子迁移率晶体管(HEMT)。
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