PHOTO-INDUCED METAL-INSULATOR-TRANSITION MATERIAL COMPLEX FOR SOLAR CELL, SOLAR CELL AND SOLAR CELL MODULE COMPRISING THE SAME

摘要

Provided are a photo-induced metal-insulator-transition (MIT) material complex for a solar cell which can be used to manufacture highly efficient solar cells with more carriers than an impurity solar cell, and a solar cell including the MIT material complex, and a solar cell module. The solar cell includes: a substrate; a lower electrode formed on the substrate; a photo-induced MIT material complex formed on the lower electrode, wherein electrons and holes are formed when light is incident on n-type and p-type metal conductors that are bonded to each other, and the electrons and holes in an intrinsic energy level or gap become carriers, and a potential difference is generated; an anti-reflection layer formed on the MIT material complex; and an upper electrode that is formed to pass through the anti-reflection layer and to contact the MIT material complex. The n-type and p-type metal conductors are MIT materials which are insulators (or semiconductors) that have a metallic electronic structure at room temperature and also intrinsic energy levels, and an odd number of electrons or holes are in their outermost electron shell of the metallic electronic structure of the MIT materials. When an intrinsic energy level of the solar cell is broken, a greater number of carriers are induced than the number of carriers induced from an impurity level of a semiconductor. Accordingly, the solar cell has more carriers than carriers induced from an impurity level of a semiconductor solar cell.