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Precursors for Formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or Copper Indium Gallium Diselenide Films
Precursors for Formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or Copper Indium Gallium Diselenide Films
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机译:用于形成硒化铜,硒化铟,二硒化铜铟和/或铜铟镓二硒化物膜的前体
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摘要
Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.
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