Electrodeposition of Novel Precursor Structures for Efficient Copper Indium Gallium Selenide (CIGS) Films

摘要

In this study, we present precursor formation techniques for CIGS films, which use multiple electrodeposition steps to form the precursor in the form of stacked layers of electroplated alloy films. The first electrodeposition step consists ofelectroplatinga Cu-In-Ga alloythin film. Afterwards this layer is combined with other electroplated layers, particularly In-Se and Ga-Se filmsto minimize or eliminate the need for gaseous species of Se, S and Te in the reaction step. Intentional grading ofelemental species throughout the film thicknesses can be achieved in each layer by changing the applied current density or voltage during the electrodeposition steps.