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GROUP III-V COMPOUND SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH VARIOUS COLLECTOR PROFILES ON A COMMON WAFER
GROUP III-V COMPOUND SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH VARIOUS COLLECTOR PROFILES ON A COMMON WAFER
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机译:基于III-V族化合物半导体的异质结双极晶体管,在共用晶片上具有各种集电极特性
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摘要
A wafer comprising at least one high Ft HBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector varies the collector profiles of individual HBTs on the wafer. The method for preparing the device comprises forming of HBT layers up to and including collector layer on non-silicon based substrate, performing ion implantation, annealing for implant activation, and forming remaining HBT layers.
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