DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE REGION BY LOCALLY INDUCING DIFFERENT LATERAL STRAIN LEVELS IN THE ACTIVE REGION

摘要

The drive current capability of a pull-down transistor and a pass transistor formed in a common active region may be adjusted on the basis of a strain-inducing mechanism, such as a stressed dielectric material and a stress memorization technique, thereby providing a simplified overall geometric configuration of the active region. Hence, static RAM cells may be formed on the basis of a minimum channel length with a simplified configuration of the active region, thereby avoiding significant yield losses as may be observed in sophisticated devices in which a pronounced variation of the transistor width may be used to adjust the ratio of the drive current capabilities for the pull-down transistor and the pass transistor.