首页> 外国专利> HIGH TEMPERATURE BD DEVELOPMENT FOR MEMORY APPLICATIONS

HIGH TEMPERATURE BD DEVELOPMENT FOR MEMORY APPLICATIONS

机译:用于存储器的高温BD开发

摘要

A method and apparatus for depositing organosilicate dielectric layers having good adhesion properties and low dielectric constant. Embodiments are described in which layers are deposited at low temperature and at high temperature. The low temperature layers are generally post-treated, whereas the high temperature layers need no post treating. Adhesion of the layers is promoted by use of an initiation layer.
机译:一种沉积具有良好粘附性能和低介电常数的有机硅酸盐介电层的方法和设备。描述了其中在低温和高温下沉积层的实施例。通常对低温层进行后处理,而对高温层则不需要后处理。通过使用引发层来促进各层的粘附。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号