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ENHANCED SPONTANEOUS SEPARATION METHOD FOR PRODUCTION OF FREE-STANDING NITRIDE THIN FILMS, SUBSTRATES, AND HETEROSTRUCTURES
ENHANCED SPONTANEOUS SEPARATION METHOD FOR PRODUCTION OF FREE-STANDING NITRIDE THIN FILMS, SUBSTRATES, AND HETEROSTRUCTURES
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机译:增强的自发分离方法,用于生产自由的氮化物薄膜,基材和异质结构
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摘要
The present invention provides a superior method for the removal of nitride semiconductor thin films, thick films, heterostructures, and bulk material from initial substrates and/or templates. The method utilizes specially patterned mask layers between the initial substrates/templates and the nitride semiconductors to decrease adhesion between the nitride semiconductor and underlying material. Thermal stresses generated upon cooling the nitride semiconductor from its deposition temperature trigger spontaneous separation of the nitride semiconductor from the initial substrate or template at the mask layer. The invention remedies deficiencies in the prior art by providing a simple, reproducible, and effective means of removing initial substrates and templates from a variety of nitride semiconductor layers and structures.
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