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Integrated circuit testing methods using well bias modification

机译:使用阱偏置修改的集成电路测试方法

摘要

Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.
机译:测试半导体电路( 10 )的方法包括测试电路并在测试过程中修改电路的阱偏置( 14、18 )。该方法通过在测试过程中修改阱偏置来提高基于电压和IDDQ测试和诊断的分辨率。另外,这些方法在压力测试期间提供了更有效的压力。该方法适用于将半导体阱(阱和/或衬底)与芯片VDD和GND分开布线的IC,从而可以在测试过程中对阱电位进行外部控制( 40 )。通常,这些方法依赖于使用阱偏置来改变晶体管阈值电压。

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