Scheme for improving settling behavior of gain boosted fully differential operational amplifier

摘要

Embodiments of the present invention disclose operational amplifiers which demonstrate good settling behavior with minimum over-shoot or ringing for improving settling behavior. The amplifiers include one or more amplification stages connected to form a symmetric structure. The amplification stage includes a boosting amplifier, a MOS transistor and a compensation capacitor. The MOS transistor can be an NMOS transistor and a PMOS transistor. Using this scheme pole-zero doublets are rearranged in a manner to improve the transient settling response.