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Methods for producing low-k carbon doped oxide films with low residual stress
Methods for producing low-k carbon doped oxide films with low residual stress
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机译:具有低残余应力的低k掺杂碳的氧化物膜的制造方法
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摘要
Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.
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