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Low Power and Full Swing Pseudo CML Latched Logic-Gates

机译:低功耗和全摆幅伪CML锁存逻辑门

摘要

“Negative And” (NAND) logic gate metal oxide semiconductor field effect transistor (MOSFET) switch(es) incorporated in the first stage of a “pseudo” current mode logic (CML) latch to provide a low-resistance (or high-resistance) circuit path to the output depending on the input voltage. This/these switch(es) are also used to deactivate the first stage of the circuit during the second half of a timing clock cycle, so as to permit the first stage to be activated only during the first half of a clock cycle. “Cross-coupled” inverter(s) are also used in the second stage of the circuit to provide acceptable “rail-to-rail” output voltage differential “swing” using less current. In addition, the second stage also has MOSFET switch(es) which activate only during the second half of a timing clock cycle and are deactivated during the first half of a clock cycle, which requires use of less current and thus reduces power consumption.
机译:包含在“伪”电流模式逻辑(CML)锁存器第一阶段中的“负与”(NAND)逻辑门金属氧化物半导体场效应晶体管(MOSFET)开关,可提供低电阻(或高电阻) )到输出的电路路径取决于输入电压。这个/这些开关还用于在定时时钟周期的后半段中去激活电路的第一级,以便仅在时钟周期的前半部中激活第一级。 “交叉耦合”逆变器也用于电路的第二级,以使用较少的电流提供可接受的“轨到轨”输出电压差“摆幅”。此外,第二级还具有一个或多个MOSFET开关,它们仅在定时时钟周期的后半部分激活,而在时钟周期的前半部分不激活,这需要使用较少的电流,从而降低了功耗。

著录项

  • 公开/公告号US2009302916A1

    专利类型

  • 公开/公告日2009-12-10

    原文格式PDF

  • 申请/专利权人 SARABJEET SINGH;

    申请/专利号US20080133602

  • 发明设计人 SARABJEET SINGH;

    申请日2008-06-05

  • 分类号H03K3/00;

  • 国家 US

  • 入库时间 2022-08-21 18:50:00

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