首页>
外国专利>
Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer
Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer
展开▼
机译:控制高介电常数薄膜结构中界面层厚度的方法,包括生长和退火化学氧化物层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for controlling interface layer thickness in high dielectric constant (high-k) film structures found in semiconductor devices. According to one embodiment, the method includes providing a monocrystalline silicon substrate, growing a chemical oxide layer on the monocrystalline silicon substrate in an aqueous bath, vacuum annealing the chemical oxide layer, depositing a high-k film on the vacuum annealed chemical oxide layer, and optionally vacuum annealing the high-k film. According to another embodiment, the method includes depositing a high-k film on a chemical oxide layer, and vacuum annealing the high-k film.
展开▼