Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth

摘要

A film formation method is provided which includes positioning an object within an electroless deposition apparatus having means for instantaneous temperature control of the object and electrolessly depositing a material upon the object. More specifically, the method includes instantaneously changing the temperature of the object by the means of instantaneous control at one or more predetermined times during the step of electrolessly depositing the material, wherein the predetermined times correspond to different film-growth stages of the material.