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Auxiliary turn-on mechanisms for reducing conduction loss in body-diode of low side MOSFET of coupled-inductor DC-DC converter

机译:减少电感耦合DC-DC转换器低端MOSFET体二极管中传导损耗的辅助导通机制

摘要

Conduction loss in the body-diode of a low side MOSFET of a power switching stage of one phase of a coupled-inductor, multi-phase DC-DC converter circuit, associated with current flow in the output inductor of that one phase that is induced by current flow in a mutually coupled output inductor of another phase, during normal switching of that other stage, is effectively prevented by applying auxiliary MOSFET turn-on signals, that coincide with the duration of the induced current, to that low side MOSFET, so that the induced current will flow through the turned-on low side MOSFET itself, thereby by-passing its body-diode.
机译:耦合电感器,多相DC-DC转换器电路的一相的功率开关级的低端MOSFET的体二极管中的传导损耗,与感应到的该相的输出电感器中的电流有关在另一级的正常开关期间,通过在另一端的互耦输出电感器中流过电流,可以通过向该低压侧MOSFET施加与感应电流的持续时间一致的辅助MOSFET导通信号来有效地防止,感应电流将流经导通的低压侧MOSFET本身,从而绕过其体二极管。

著录项

  • 公开/公告号US7786711B2

    专利类型

  • 公开/公告日2010-08-31

    原文格式PDF

  • 申请/专利权人 JIA WEI;KUN XING;

    申请/专利号US20080259220

  • 发明设计人 KUN XING;JIA WEI;

    申请日2008-10-27

  • 分类号G05F1/613;G05F1/00;

  • 国家 US

  • 入库时间 2022-08-21 18:49:34

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