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Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping
Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping
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机译:制造包括通过对角掺杂形成杂质区的薄膜晶体管的方法
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摘要
It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher yield at lower cost. In the present invention, a lightly doped impurity region is formed in a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer in a thin film transistor. The semiconductor layer is doped diagonally to the surface thereof using the gate electrode layer as a mask to form the lightly doped impurity region. Therefore, the properties of the thin film transistor can be minutely controlled.
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