Planar layer of image sensor, method for manufacturing planer layer, and image sensor including planar layer

摘要

An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of an image sensor, a manufacturing method thereof, and the image sensor including the planar layer. Embodiments relate to a planar layer located under microlenses, the planar layer including valleys of patterns having a predetermined size, which may eliminate optical cross talk between adjacent pixels.