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Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface density
Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface density
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机译:包括具有不同电荷陷阱表面密度的电荷累积层的半导体器件及其制造方法
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摘要
There is provided a trap memory device suppresses electric charges from flowing from the outside into a charge accumulation region and accumulated electric charges from diffusing to the outside or flowing out due to a defect. A gate conductor 6 is formed through a laminate insulating film including a first gate insulating film 3, a charge accumulation layer 4 and a second gate insulating film 5 on a silicon substrate 1. The laminate insulating film (3 to 5) projects outside the gate conductor 6 and extends to under the outer end of a side wall 8. The charge accumulation layer 4 includes a high trap surface-density region 4a immediately under the gate conductor and a low trap surface-density region 4b outside the gate conductor.
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