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High efficiency CMOS image sensor pixel employing dynamic voltage supply
High efficiency CMOS image sensor pixel employing dynamic voltage supply
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机译:采用动态电压源的高效CMOS图像传感器像素
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摘要
A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.
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