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A wide dynamic range CMOS PFM digital pixel sensor with in-pixel variable voltage reference

机译:具有像素内可变电压基准的宽动态范围CMOS PFM数字像素传感器

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摘要

This paper proposes a new pulse-frequency-modulation (PFM) digital pixel sensor (DPS) with a variable reference voltage. An in-pixel variable reference voltage generator is employed to ramp the reference voltage of the comparator locally such that the comparison of photo diode current and the reference voltage can take place earlier. This expands the dynamic range of the pixel sensor when the level of illumination is low. The complexity of routing of the proposed pixel sensor are comparable to that of digital pixel sensor with a constant reference voltage. The additional hardware cost of the proposed digital pixel sensor is only a capacitor and two static inverters, resulting in a fill factor that is comparable to those of digital pixel sensors with a constant global reference voltage. Factors that are critically to the performance of the proposed pixel sensor are examined in detail. The proposed digital pixel sensor has been designed in TSMC-0.18 μm 1.8 V CMOS technology and analyzed using Spectre with BSIM3V3 device models. Simulation results demonstrate that the proposed PFM digital pixel has a dynamic range of 120 dB when the integration time is set to 60 μs, approximately 40 dB more than the corresponding PFM digital pixel sensor with a constant reference voltage. The fill factor of the proposed pixel sensor is 20%, comparable to that of pixel sensors with a constant reference voltage.
机译:本文提出了一种具有可变参考电压的新型脉冲频率调制(PFM)数字像素传感器(DPS)。使用像素内可变参考电压发生器来局部地使比较器的参考电压倾斜,使得可以更早地进行光电二极管电流和参考电压的比较。当照明水平低时,这扩大了像素传感器的动态范围。所提出的像素传感器的布线复杂度与具有恒定参考电压的数字像素传感器的布线复杂度相当。提出的数字像素传感器的额外硬件成本仅为一个电容器和两个静态反相器,因此其填充因子与具有恒定全局参考电压的数字像素传感器的填充因子相当。详细检查了对提出的像素传感器的性能至关重要的因素。拟议中的数字像素传感器采用TSMC-0.18μm1.8 V CMOS技术设计,并使用Spectre和BSIM3V3器件模型进行了分析。仿真结果表明,当积分时间设置为60μs时,提出的PFM数字像素具有120 dB的动态范围,比具有恒定参考电压的相应PFM数字像素传感器大约高40 dB。所提出的像素传感器的填充因子为20%,与具有恒定参考电压的像素传感器的填充因子相当。

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