首页> 外国专利> OVER VOLTAGE PROTECTION DEVICE FOR ELECTRONIC DEVICES WITH HIGH VOLTAGE DC POWER SUPPLY

OVER VOLTAGE PROTECTION DEVICE FOR ELECTRONIC DEVICES WITH HIGH VOLTAGE DC POWER SUPPLY

机译:具有高压直流电源的电子设备的过电压保护装置

摘要

: The various embodiments of the invention provide an over voltage protection device for an electronic device with high voltage DC power supply. The device has a P channel MOSFET with its control terminal connected to the negative terminal of a DC power source through a resistance A PNP transistor and a first Zener diode ate connected to the gate to source of the MOSFET. A second Zener diode is connected to the base of the transistor. Under normal operating condition, the transistor is switched off to switch on the MOSFET to supply the power to the load. Under the overvoltage condition, the transistor is switched on to switch off the MOSFET to prevent the power supply to the load. A micro controller interface through a NPN transistor is provided to control the load independent of the input voltage level. No. of Pages : 30 No. of Claims : 25
机译::本发明的各种实施例提供了一种用于具有高压DC的电子设备的过电压保护设备。电源供应。该器件具有一个P沟道MOSFET,其控制端连接到直流电源的负极端通过一个电阻PNP晶体管和一个第一齐纳二极管连接到MOSFET的栅极到源极。第二个齐纳二极管连接到晶体管的基极。在正常工作条件下,晶体管关断以导通MOSFET为负载供电。在过压条件下,晶体管导通以将MOSFET关断至防止向负载供电。提供了一个通过NPN晶体管的微控制器接口来独立控制负载输入电压电平的 页数:30版权声明数:25

著录项

  • 公开/公告号IN2008CH01722A

    专利类型

  • 公开/公告日2010-07-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN1722/CHE/2008

  • 发明设计人 SANTOSH BHANDARKAR;

    申请日0000-00-00

  • 分类号H01L29/00;

  • 国家 IN

  • 入库时间 2022-08-21 18:46:23

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