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METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL
METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL
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机译:CDTE / CDS薄膜太阳能电池中非整流反接的形成方法
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摘要
A method for the formation of a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film comprising the steps of depositing a layer of As2Te3 on the CdTe layer at a substrate temperature comprised between ambient temperature and 200°C; depositing a layer of Cu on the As2Te3 layer; bringing at least the deposited Cu layer to a temperature comprised between 150° and 250°C. The method is used to form a stable back-contact on CdTe/CdS thin film solar cells.
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机译:一种在p型半导体CdTe薄膜上形成非整流欧姆接触的方法,该方法包括以下步骤:在环境温度至200℃之间的衬底温度下,在CdTe层上沉积一层As2Te3。在As 2 Te 3层上沉积一层Cu;使至少沉积的Cu层达到150℃至250℃之间的温度。该方法用于在CdTe / CdS薄膜太阳能电池上形成稳定的背接触。
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