photonic materials using intermediate band based on a chalcogenide semiconductor type.

摘要

photonic materials using intermediate band based on a chalcogenide semiconductor type.; The invention relates to the use in the manufacture of materials or devices for photonic applications, type compounds chalcogenide with Indian element octahedrally coordinated and in which a transition element in octahedral position is introduced by generating an intermediate band occupied partially separated from the valence and conduction semiconductor departure, as results from quantum mechanical calculations. This enables to obtain, by two-photon absorption of less than the width of the bandgap energy of the semiconductor starting an equivalent result to that obtained without said intermediate band, absorbing a photon of higher energy. Using such material may therefore provide higher yields and improved performance in various devices photovoltaic type, photoelectrochemical photocatalytic, optoelectronic or photonics conversion. A specific material with these characteristics, and is synthesized here is the indium sulfide with part of the latter element replaced by vanadium or titanium.