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JOSEPHSON JUNCTION DEVICE FOR SUPERCONDUCTIVE ELECTRONICS WITH A MAGNESIUM DIBORIDE

机译:带有二硼化镁的超导电子的JOSEPHSON结器件

摘要

A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.
机译:约瑟夫逊结(JJ)器件包括缓冲衬底,该缓冲衬底包括在衬底上形成的第一缓冲层。在第一缓冲层上形成第二缓冲层。第二缓冲层包括六方化合物结构。在包括至少两层超导材料的缓冲衬底上形成三层结构。薄的隧道势垒层位于至少两层之间。缓冲基板用于最大程度地减少三层结构中的晶格失配和相互扩散,从而使JJ器件能够在20 K以上的温度下工作。

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