PROCESS FOR PRODUCTION OF ＡｌXＧａ(1-X)Ｎ SINGLE CRYSTAL, ＡｌXＧａ(1-X)Ｎ SINGLE CRYSTAL, AND OPTICS

摘要

A process for the production of an AlXGa(1-X)N single crystal (10) (wherein 0x≤1) by growing an AlXGa(1-X)N single crystal by a sublimation method, which comprises the step of preparing a substrate having the same compositional ratio (x) as that of the AlXGa(1-X)N single crystal, the step of preparing a high-purity raw material, and the step of sublimating the raw material to grow an AlXGa(1-X)N single crystal on the substrate.  The AlXGa(1-X)N single crystal (10) exhibits an absorption coefficient of 100cm-1 or below for a light having a wavelength of 250nm to shorter than 300nm and an absorption coefficient of 21cm-1 or below for a light having a wavelength of 300nm to shorter than 350nm, each absorption coefficient being determined at 300K.