PROCESS FOR PRODUCING SILICON CARBIDE SINTER JIG FOR USE IN SEMICONDUCTOR PRODUCTION AND SILICON CARBIDE SINTER JIG OBTAINED BY THE PROCESS

摘要

The present invention provides a sintered silicon carbide jig production method capable of simply increasing the purity of a sintered silicon carbide jig. A method of producing a sintered silicon carbide jig comprising a process in which a second sintered body is heated at a temperature rising rate of 3 to 5 DEG C/min up to heating treatment temperature selected in the range of 2200 to 2300 DEG C under an argon atmosphere, kept at the same heating treatment temperature for 3 hours, and cooled at a temperature lowering rate of 2 to 3 DEG C/min down to 1000 DEG C.