NICKEL-CONTAINING FILM‑FORMATION MATERIAL, AND NICKEL-CONTAINING FILM‑FABRICATION METHOD

摘要

Disclosed is a nickel-containing film‑formation material that does not easily cause residual carbon in the nickel-containing film, and that is not prone to by-production of HF, in film formation by CVD (chemical vapor deposition). Further disclosed is a nickel-containing film‑formation material in which the nickel-containing film is a nickel silicide film. The nickel-containing film formation material is characterized by containing at least one type of nickel complex selected from a group comprising Ni(PF2(CF3))4, Ni(PF(CF3)2)4, Ni(P(CF3)3)4, Ni(PF2R2)4, Ni(PFR3R4)4, and Ni(PF2NR1R5)4 (wherein R1 through R5 each individually represent H or an alkyl group or phenyl group with 1‑6 carbons.).