Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate

摘要

In the pressure sensor of the invention, since the gold-silicon eutectic crystal layer is interposed between the contact layer and the silicon substrate, that is, since the contact layer and the silicon substrate are connected electrically to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, a Q value of the sensor can be stabilized, and the satisfactory sensor characteristic can be performed. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.