METHOD FOR GROWING GROUP 3B NITRIDE CRYSTAL, AND GROUP 3B NITRIDE CRYSTAL

摘要

A gallium nitride crystal is grown by a method which comprises immersing a seed crystal substrate in a mixed melt containing both gallium and sodium, and then heating the mixed melt under a pressurized atmosphere which contains nitrogen gas but is free from oxygen gas to grow a gallium nitride crystal on the seed crystal substrate.  In this method, the growth of a gallium nitride crystal on the seed crystal substrate is conducted first by employing, as the conditions for stirring the mixed melt, the first stirring conditions set in a manner that forms an uneven crystal-growth face; and then by employing, as the conditions for stirring the mixed melt, the second stirring conditions set in a manner that forms an even crystal-growth face.