OPERATION METHOD OF A NON-VOLATILE MEMORY DEVICE FOR SIMULTANEOUSLY PERFORMING A SELECTION BIT LINE VOLTAGE CHANGE PROCESS AND A PRECHARGE OPERATION OF A NON-SELECTION BIT LINE IN A PROGRAM PROCESS

摘要

PURPOSE: An operation method of a non-volatile memory device is provided to reduce a program time by integrating a voltage change process of selection bit lines and a pre-charge process of a non-selection bit line.;CONSTITUTION: A program instruction is inputted to a non-volatile memory device(S301). A controller pre-charges non-selection bit lines. The controller changes voltage of operation and selection bit lines according to a data state of a second latch(303). The controller applies variable voltage at a power voltage level. The controller applies an odd bit line discharge control signal at a high level. The controller applies an even bit line selection signal, a sensing control signal, and a second data transmission signal at a high level. Flag information for controlling a progress of a program of a multi-level cell is stored in a node. The program is proceeded by applying program voltage to a word line(S305,S307).;COPYRIGHT KIPO 2010