FERROELECTRIC MATERIAL, A FERROELECTRIC MEMORY DEVICE WITH EXCELLENT DATA HOLDING CHARACTERISTIC USING THE SAME, AN ELECTRIC TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A ferroelectric material is provided to form a ferroelectric material layer using a spin coating method or screen printing and to form a ferroelectric layer wit excellent data holding characteristic because the formation temperature of the ferroelectric layer approximately downs 200 deg.C or less.;CONSTITUTION: A ferroelectric material comprises a mixture of organic ferroelectric material and metal. The ferroelectric memory device comprises a substrate(1), source and drain regions(2,3) which are formed at a certain region of the substrate; a channel(4) formed between source and drain regions; a ferroelectric layer(40) formed at a part corresponding to the channel region on a semiconductor substrate; source electrode(6), and drain electrode(7) which are respectively formed on the source and drain regions and organic ferroelectric layer.;COPYRIGHT KIPO 2010