EXPOSURE APPARATUS CAPABLE OF REDUCING VARIATION OF CRITICAL DIMENSION OF PATTERN OF MASK FORMED ON SUBSTRATE, AND PREPARATION METHOD OF APERTURE STOP

摘要

PURPOSE: An exposure apparatus, and a manufacturing method of an aperture stop are provided to reduce the ununiformity of critical dimension of the mask pattern formed on a substrate and to improve yield.;CONSTITUTION: An exposure apparatus comprises an illumination optical system which illuminates a mask; a projection optical system which projects the pattern image of the mask on a substrate; a wavefront splitting device which forms the secondary light source at the position conjugated with the pupil plane of the projection optical system; and an aperture stop(11) arranged at the position shifted from the focal plane of the injection side of the wavefront splitting device. The aperture stop comprises a light-blocking part(11b), an aperture part(11a), and a light attenuation part(11c) located between the light-blocking part and the aperture part.;COPYRIGHT KIPO 2010