REFLECTION MASK, A METHOD OF MANUFACTURING THE SAME AND A METHOD OF CORRECTING A DESIGN OF THE SAME, INCLUDING EUV REFLECTION MASK WITH REDUCED A FLARE EFFECT

摘要

PURPOSE: A reflection mask, a method of manufacturing the same, and a method of correcting a design of the same are provided to supply a uniform reflection light over a reflection mask by controlling the reflectivity of the peripheral area with a buffer film pattern.;CONSTITUTION: A reflective mask comprises a substrate, a multi-layer reflective film(120), an absorption film pattern structure(130), and a buffer film pattern. The multi-layer reflective film is formed on the substrate. The absorption film pattern structure is formed on the reflective film and transfers a layout on a target substrate. The buffer film pattern is adjacent to the absorption film pattern structure on the reflective film. The buffer pattern exposes a part of the reflective film to the outside by corresponding to the pattern density of the absorption film pattern structure.;COPYRIGHT KIPO 2010