SEMICONDUCTOR MEMORY DEVICE AND A METHOD FOR TESTING THE SAME, CAPABLE OF GENERATING A DETECTION SIGNAL OF COMPRESSION TEST BY USING A DATA VALUE CORRESPONDING TO A PLURALITY OF MEMORY CELLS AND REFERENCE DATA

摘要

PURPOSE: Semiconductor memory device and a method for testing the same are provided to improve the reliability of a compression test mode by detecting a compression signal through which a state of a memory cell is determined failure or not.;CONSTITUTION: In a device, a reference data value storage(210) stores a reference data value corresponding to a test signal. The reference data value storage is designed as an inverter type latch including a first and a second inverter(INV1,INV2). The test signal is a signal which is generated outside or inside by tester in the compression test mode. The compression test result detection unit(230) compares data value and the reference data value corresponding to a plurality of memory cells and outputs normal/abnormal state of the memory cells as a compression test detection signal. A compression test result detection unit includes first-third compression parts(232,234,236) and a compression test result output part(238).;COPYRIGHT KIPO 2010