BULK VOLTAGE GENERATION CIRCUIT OF A SEMICONDUCTOR DEVICE, CAPABLE OF CONTROLLING THE POTENTIAL OF A BULK VOLTAGE

摘要

PURPOSE: A bulk voltage generation circuit of a semiconductor device is provided to compensate for the threshold voltage variation due to the temperature variation of a transistor receiving a bulk voltage by controlling the potential of the bulk voltage.;CONSTITUTION: A temperature sensor(110) outputs a detection signal with the potential corresponding to the sensed temperature. A fixed potential unit(120) outputs a reference detection signal with the same potential regardless of the temperature. A bias generator(140,150) generates biases with different potential. A bias selector(160) selects one bias among the generated biases by comparing the detection signal with the reference detection signal.;COPYRIGHT KIPO 2010