首页> 外国专利> GERMANIUM FILM MANUFACTURING METHOD USING ORGANIC GERMANIUM COMPOUND, CAPABLE OF UTILIZING REDUCTION GAS AS REACTION GAS

GERMANIUM FILM MANUFACTURING METHOD USING ORGANIC GERMANIUM COMPOUND, CAPABLE OF UTILIZING REDUCTION GAS AS REACTION GAS

机译:使用有机锗化合物的锗膜的制造方法,该有机锗化合物可利用还原性气体作为反应气体

摘要

PURPOSE: A germanium film manufacturing method using organic germanium compound is provided to manufacture a film with uniform thickness without pores.;CONSTITUTION: A germanium film manufacturing method using organic germanium compound comprises the following steps. A germanium thin film is manufactured on a substrate through a chemistry gas deposition method or an atomic layer deposition method. The organic germanium compound is used as germanium source and reduction gas is used as the reaction gas. The chemistry gas deposition method comprises the following steps. The organic germanium compound and the reduction gas are simultaneously injected into a reactor. The germanium source which is not absorbed and the by-product are removed from the reactor. The atomic layer deposition method comprises the following steps. The germanium compound is injected into the reactor and is absorbed on the substrate(S110). The germanium source and the by-product are removed from the reactor(S120). The reduction gas is injected and reacted(S130). The by-product is eliminated from the reactor after the reaction(S140).;COPYRIGHT KIPO 2010
机译:目的:提供一种使用有机锗化合物的锗膜制造方法,以制造厚度均匀,无孔的膜。组成:使用有机锗化合物的锗膜制造方法包括以下步骤。通过化学气相沉积法或原子层沉积法在基板上制造锗薄膜。将有机锗化合物用作锗源,并将还原气体用作反应气体。化学气体沉积方法包括以下步骤。将有机锗化合物和还原气体同时注入反应器中。从反应器中除去未被吸收的锗源和副产物。原子层沉积方法包括以下步骤。将锗化合物注入到反应器中并吸收在基板上(S110)。从反应器中除去锗源和副产物(S120)。注入还原气体并使之反应(S130)。反应后从反应器中除去副产物(S140)。; COPYRIGHT KIPO 2010

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