首页> 外国专利> LIGHT EMITTING DEVICE FOR IMPROVING OPTICAL GAIN BY REDUCING ELECTRIC FIELD INSIDE A QUANTUM WELL STRUCTURE

LIGHT EMITTING DEVICE FOR IMPROVING OPTICAL GAIN BY REDUCING ELECTRIC FIELD INSIDE A QUANTUM WELL STRUCTURE

机译:通过减少量子阱结构内的电场来改善光学增益的发光装置

摘要

PURPOSE: A light emitting device is provided to minimize piezo and spontaneous polarization using ternary superlattice barrier layer without the formation of quaternary film barrier layer.;CONSTITUTION: A light emitting layer(103) comprises a barrier formed into an active layer and a superlattice layer. The superlattice layer is arranged on the upper and lower parts of the active layer. The superlattice layer reduces the sum of the electric field due to spontaneous polarization and the electric field due to piezo. An N type contact layer(102) is used in order to inject the electronics into the light-emitting layer. A P-type contact layer(104) is arranged to face N type contact layer to boundary with the light-emitting layer.;COPYRIGHT KIPO 2010
机译:目的:提供一种发光器件,以使用三元超晶格阻挡层将压电和自发偏振减至最小,而无需形成四元膜阻挡层。组成:发光层(103)包括形成为有源层和超晶格层的阻挡层。超晶格层布置在有源层的上部和下部。超晶格层减少了由于自发极化引起的电场与由于压电引起的电场之和。为了将电子器件注入到发光层中,使用了N型接触层(102)。 P型接触层(104)被布置成面对N型接触层以与发光层边界。; COPYRIGHT KIPO 2010

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