CMOS IMAGE SENSOR AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING CHARGE TRANSFER EFFICIENCY BY IMPROVING A DARK PROPERTY

摘要

PURPOSE: A CMOS image sensor and a manufacturing method thereof are provided to improve photosensitivity by forming a channel with a low surface resistance by increasing the surface of the channel.;CONSTITUTION: A channel region with an uneven shape is formed on a semiconductor substrate(102). A gate electrode(112) is formed by interposing a gate insulation layer(114) on the semiconductor substrate. A gate spacer(118) is formed on both sidewalls of the gate electrode. An interlayer dielectric layer(132) is formed on the semiconductor substrate to cover the gate electrode including a gate spacer.;COPYRIGHT KIPO 2010