METHOD AND A CIRCUIT ARRANGEMENT FOR INCREASING THE DIELECTRIC STRENGTH OF METAL OXIDE TRANSISTORS AT LOW TEMPERATURES, CAPABLE OF THE DIELECTRIC STRENGTH OF AN ELECTRICAL CIRCUIT

摘要

PURPOSE: A method and a circuit arrangement for increasing the dielectric strength of metal oxide transistors at low temperatures are provided to provide a circuit arrangement with increased dielectric strength at a low temperature without the selection of the metal oxide transistors.;CONSTITUTION: A circuit arrangement includes at least one metal oxide transistor. The metal oxide transistor is heated before an approximately breakdown voltage is applied to the metal oxide transistor. The heating process is performed by a high current which flows through the metal oxide transistor, the increase of the switching loss of the metal oxide transistor or the temporary linear operation of the metal oxide transistor.;COPYRIGHT KIPO 2010