首页> 外国专利> THIN FILM TRANSISTOR, A METHOD FOR MANUFACTURING THE SAME AND AN ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME, CAPABLE OF PREVENTING AN IMPURITY ON A SUBSTRATE FROM INTRUDING INTO THE DEVICE

THIN FILM TRANSISTOR, A METHOD FOR MANUFACTURING THE SAME AND AN ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME, CAPABLE OF PREVENTING AN IMPURITY ON A SUBSTRATE FROM INTRUDING INTO THE DEVICE

机译:薄膜晶体管,一种制造同一种薄膜的方法,以及一种包括该同一种薄膜的有机发光显示设备,能够防止基质中的杂质进入设备

摘要

PURPOSE: A thin film transistor, a method for manufacturing the same and an organic light emitting display device including the same are provided to protect the device from damaging by forming a protective layer which includes an inorganic clay of which sodium cation is removed on a substrate.;CONSTITUTION: A protective layer(105) which includes a clay with amine is arranged on a substrate. A buffer layer is arranged on the protective layer. A semiconductor layer(120) is arranged on the buffer layer. A gate electrode(140) is arranged on the semiconductor layer. A gate insulation layer(130) insulates the semiconductor layer from the gate electrode. A source/drain electrode(150a, 150b) is insulated from the gate electrode and is connected to the semiconductor layer.;COPYRIGHT KIPO 2010
机译:用途:提供一种薄膜晶体管,其制造方法以及包括该薄膜晶体管的有机发光显示装置,以通过在基板上形成包括去除了钠阳离子的无机粘土的保护层来保护该装置免受损坏。组成:保护层(105)包括具有胺的粘土。缓冲层布置在保护层上。半导体层(120)布置在缓冲层上。栅电极(140)布置在半导体层上。栅绝缘层(130)使半导体层与栅电极绝缘。源/漏电极(150a,150b)与栅电极绝缘并连接到半导体层。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100042071A

    专利类型

  • 公开/公告日2010-04-23

    原文格式PDF

  • 申请/专利权人 SAMSUNG MOBILE DISPLAY CO. LTD.;

    申请/专利号KR20080101195

  • 发明设计人 LEE DONG KYU;KIM MU HYUN;

    申请日2008-10-15

  • 分类号H01L29/786;H01L51/50;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:55

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