首页> 外国专利> MANUFACTURING APPARATUS OF A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD USING THE SAME, USING A QUARTZ CRYSTAL MICRO BALANCE FOR AN ETCHING, AN EVAPORATION OR A CLEANING END-POINT IN AN EVAPORATION, AND AN ETCHING OR A CLEANING PROCESS TO ELIMINATE A GENERATION FILM INSIDE A PROCESS CHAMBER

MANUFACTURING APPARATUS OF A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD USING THE SAME, USING A QUARTZ CRYSTAL MICRO BALANCE FOR AN ETCHING, AN EVAPORATION OR A CLEANING END-POINT IN AN EVAPORATION, AND AN ETCHING OR A CLEANING PROCESS TO ELIMINATE A GENERATION FILM INSIDE A PROCESS CHAMBER

机译:半导体器件的制造装置和使用该器件的制造方法,使用石英晶体微平衡来进行蚀刻,蒸发或清洁中的终点,以及蚀刻或清洁过程以消除污染工艺室

摘要

PURPOSE: A manufacturing apparatus of a semiconductor device and a manufacturing method using the same, using a quartz crystal micro balance for determining an etching, an evaporation or a cleaning end-point in an evaporation, an etching or a cleaning process are provided to determine a generation film eliminating end-point by monitoring the thickness variance of the generation film using a quartz installed inside a process chamber.;CONSTITUTION: A thin film is evaporated on the upper side of a wafer by an evaporation process. The inside of a processing chamber is cleaned. The thickness variance of a generation film is monitored using quartz installed inside the processing chamber. The generation film eliminating end-point is determined based on monitoring. The elimination of the generation film is processed by a remote plasma cleaning device(100).;COPYRIGHT KIPO 2010
机译:用途:提供一种半导体装置的制造装置及其制造方法,其使用石英微天平确定蒸发,蚀刻或清洗过程中的蚀刻,蒸发或清洗终点,以确定通过使用安装在处理室内的石英监控生成膜的厚度变化来消除生成膜的端点。组成:通过蒸发工艺在晶片的上侧蒸发薄膜。处理室的内部被清洁。使用安装在处理腔室内的石英监控生成膜的厚度变化。基于监测确定世代成膜消除终点。通过远程等离子清洁设备(100)来消除胶片的产生。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100069392A

    专利类型

  • 公开/公告日2010-06-24

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20080128063

  • 发明设计人 KIM YONG JIN;BAI KEUN HEE;

    申请日2008-12-16

  • 分类号H01L21/3065;H01L21/205;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:26

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