SEMICONDUCTOR DEVICE WHICH HAS A DUMMY CELL BIT LINE STRUCTURE BLOCKING A LEAKAGE CURRENT WHICH IS APPLIED TO A CELL ARRAY, CAPABLE OF PREVENTING DYNAMIC REFRESH FAULT, AND A FORMING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a forming method thereof are provided to block a leakage current which is coming out from a peripheral circuit region by forming a terminal capturing a well bias in a dummy cell array bit line.;CONSTITUTION: An active area and an inactive area are formed in the memory cell area(D) and dummy cell region(C) of a semiconductor substrate(100). A gate electrode is formed in the memory cell area and the active area of the dummy cell area. An inter-layer insulating film(130) is formed on the gate electrode, the memory cell area, and the dummy cell area. A bit line plug(135) is formed on the inter-layer insulating film. The bit line is formed on the bit line plug.;COPYRIGHT KIPO 2010