OVERLAY VERNIER FORMING METHOD, CAPABLE OF IMPROVING OVERLAY ACCURACY OF A PAD MASK AND A PARTITION MASK

摘要

PURPOSE: An overlay vernier forming method is provided to prevent the degradation of the overlay accuracy by forming an outer vernier pattern of a mesa structure and preventing the formation of the nitride film residue on the peripheral circuit region.;CONSTITUTION: A semiconductor substrate(200) defines a first area(A) forming a partition mask and a second area(B) forming a pad mask. First and second hard mask films(205, 210) and a partition object film are formed on the semiconductor substrate. The partition object film is patterned and the partition pattern is formed on the first area of the semiconductor substrate. A spacer material film is formed on the exposed surface of the hard mask film of the partition pattern and the second area.;COPYRIGHT KIPO 2010