METHOD FOR MANUFACTURING AN IMAGE SENSOR, CAPABLE OF PREVENTING DAMAGE TO POLY SILICON IN AN ION IMPLANTATION PROCESS

摘要

PURPOSE: A method for manufacturing an image sensor is provided to improve image quality by protecting poly silicon of a gate electrode formed on a substrate.;CONSTITUTION: Poly silicon and an oxide film(80) are formed on a semiconductor substrate(10). A first photo resist pattern is formed for etching the poly silicon and the oxide film. The oxide film and the poly silicon are etched by using a first photo resist pattern. A second photo resist pattern is formed on the semiconductor substrate and the oxide film for implanting an ion. A photo diode region is formed on the semiconductor substrate by performing an ion implantation process using the second photo resist pattern as an ion implantation mask.;COPYRIGHT KIPO 2010