CMOS IMAGE SENSOR MANUFACTURING METHOD AND A CMOS IMAGE SENSOR THEREOF, CAPABLE OF REMOVING THE CAUSE OF THE LEAKAGE CURRENT

摘要

PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor manufacturing method and a CMOS image sensor thereof are provided to increase the reliability of blue photo-diode formation by adding a process of tilt/twist to the low energy in ion implantation.;CONSTITUTION: A first pixel p-well(102) is formed by ion implantation into a first preset energy on an epitaxial layer(100) of the semiconductor substrate. A second pixel p-well is formed by ion implantation into a second preset energy on the epitaxial layer. A third pixel p-well is formed by ion implantation into a third preset energy on the epitaxial layer. A fourth p-well is formed by tilt and twist ion implantation into the first preset energy on the epitaxial layer.;COPYRIGHT KIPO 2010