PREPARATION METHOD OF AL-INDUCED NANO-CRYSTALLINE SILICON INDUCED, CAPABLE OF CONTROLLING THE SIZE OF NONO-CRYSTAL THROUGH A HEAT TREATMENT

摘要

PURPOSE: A preparation method of al-induced nano-crystalline silicon induced is provided to easily control optical property, chemical property, and a physical property by manufacturing nano-crystalline silicon thin film under nitrogen atmosphere.;CONSTITUTION: A thin film is deposited on a silicon wafer by using a silicon target and an aluminum chip as a target material. The deposited thin film on wafer is anneal-processed to form a nano-crystal. The Si nano crystals is 1~20 nm. The aluminum chip is 2.5~10 weight% of the silicon target. A thermal process operates in the range of 400~1200 °C.;COPYRIGHT KIPO 2010