首页> 外国专利> LIGHT EMITTING DIODE EQUIPPED WITH THE MAGNET STRUCTURE ARRANGING THE MAGNET STRUCTURE TO THE LOWER PART OF THE LIGHT-EMITTING STRUCTURE AND THE LIGHT-EMITTING DIODE PACKAGE EQUIPPED WITH THE MAGNET STRUCTURE

LIGHT EMITTING DIODE EQUIPPED WITH THE MAGNET STRUCTURE ARRANGING THE MAGNET STRUCTURE TO THE LOWER PART OF THE LIGHT-EMITTING STRUCTURE AND THE LIGHT-EMITTING DIODE PACKAGE EQUIPPED WITH THE MAGNET STRUCTURE

机译:装有磁铁结构的发光二极管,使磁铁结构位于发光结构的下部,并且装有磁铁结构的发光二极管组件

摘要

PURPOSE: The light emitting diode equipped with the magnet structure and the light-emitting diode package equipped with the magnet structure multiply the recombination rate of hole and electronics. The internal quantum efficiency of the light emitting diode is improved.;CONSTITUTION: The first cladding layer(22) is formed on the Base substrate(10). The active layer(24) is formed on the first cladding layer. The second clad layer(26) is formed on the active layer. The active layer has the quantum point structure or the multiple quantum well. The first cladding layer, and the active layer and the second clad layer are formed by using the MBE(Molecular Beam Epitaxy) technology.;COPYRIGHT KIPO 2010
机译:目的:配备磁铁结构的发光二极管和配备磁铁结构的发光二极管封装,可以使空穴和电子的复合率成倍增加。组成:组成:第一覆层(22)形成在基础基板(10)上。有源层(24)形成在第一覆层上。第二覆盖层(26)形成在有源层上。活性层具有量子点结构或多量子阱。通过使用MBE(分子束外延)技术形成第一包层,有源层和第二包层。; COPYRIGHT KIPO 2010

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